Journal article
Photoinduced sign change of magnetoresistance in field-effect transistors based on a bipolar molecular glass



Publication Details
Authors:
Reichert, T.; Salbeck, J.; Bruhn, C.; Saragi, T.; Scheffler, A.; Tatarov, E.; Fuhrmann-Lieker, T.; Ueberschaer, R.
Publisher:
The Royal Society of Chemistry
Publication year:
2013
Journal:
Chemical Communications
Pages range:
4564-4566
Volume number:
49
ISSN:
1359-7345

Abstract
The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%){,} while a magnetic-field induced resistance decrease (negative MR up to -6.5%) can be achieved under illumination.

Last updated on 2019-25-07 at 11:22